All MOSFET. TJ200F04M3L Datasheet

 

TJ200F04M3L Datasheet and Replacement


   Type Designator: TJ200F04M3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 2400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO-220SM
 

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TJ200F04M3L Datasheet (PDF)

 ..1. Size:279K  toshiba
 tj200f04m3l.pdf pdf_icon

TJ200F04M3L

TJ200F04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ200F04M3LTJ200F04M3LTJ200F04M3LTJ200F04M3L1. Applications1. Applications1. Applications1. Applications Automotive DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.45 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS = -10

 9.1. Size:900K  cn hunteck
 htj200n02.pdf pdf_icon

TJ200F04M3L

HTJ200N02P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level18RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness6 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number Pac

Datasheet: SSF5508D , SSF5510G , SSF6010G , SSF7008 , TJ100F04M3L , TJ100F06M3L , TJ150F04M3L , TJ15S10M3 , EMB04N03H , TJ9A10M3 , TK100A06N1 , TK100A08N1 , TK100A10N1 , TK100E06N1 , TK100E08N1 , TK100E10N1 , TK100L60W .

Keywords - TJ200F04M3L MOSFET datasheet

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