TJ200F04M3L Datasheet. Specs and Replacement

Type Designator: TJ200F04M3L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 2400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO-220SM

TJ200F04M3L substitution

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TJ200F04M3L datasheet

 ..1. Size:279K  toshiba
 tj200f04m3l.pdf pdf_icon

TJ200F04M3L

TJ200F04M3L MOSFETs Silicon P-Channel MOS (U-MOS ) TJ200F04M3L TJ200F04M3L TJ200F04M3L TJ200F04M3L 1. Applications 1. Applications 1. Applications 1. Applications Automotive DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.45 m (typ.) (VGS = -10 V) (2) Low leakage current IDSS = -10... See More ⇒

 9.1. Size:900K  cn hunteck
 htj200n02.pdf pdf_icon

TJ200F04M3L

HTJ200N02 P-1 20V N-Ch Power MOSFET Feature 20 V VDS High Speed Power Switching, Logic Level 18 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 6 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT-23 Gate Src Part Number Pac... See More ⇒

Detailed specifications: SSF5508D, SSF5510G, SSF6010G, SSF7008, TJ100F04M3L, TJ100F06M3L, TJ150F04M3L, TJ15S10M3, AON7403, TJ9A10M3, TK100A06N1, TK100A08N1, TK100A10N1, TK100E06N1, TK100E08N1, TK100E10N1, TK100L60W

Keywords - TJ200F04M3L MOSFET specs

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