All MOSFET. TJ9A10M3 Datasheet

 

TJ9A10M3 Datasheet and Replacement


   Type Designator: TJ9A10M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-220SIS
 

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TJ9A10M3 Datasheet (PDF)

 ..1. Size:234K  toshiba
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TJ9A10M3

TJ9A10M3MOSFETs Silicon P-Channel MOS (U-MOS)TJ9A10M3TJ9A10M3TJ9A10M3TJ9A10M31. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 120 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS = -10 A (max) (VDS = -100 V)(3) Enhancem

 ..2. Size:243K  inchange semiconductor
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TJ9A10M3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TJ9A10M3ITJ9A10M3FEATURESLow drain-source on-resistance:RDS(on) 0.17. (VGS = -10 V)Enhancement mode:Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M

Datasheet: SSF5510G , SSF6010G , SSF7008 , TJ100F04M3L , TJ100F06M3L , TJ150F04M3L , TJ15S10M3 , TJ200F04M3L , IRF9640 , TK100A06N1 , TK100A08N1 , TK100A10N1 , TK100E06N1 , TK100E08N1 , TK100E10N1 , TK100L60W , TK100S04N1L .

History: IRFR9210PBF | WMJ15N80M3 | IRF7530 | WMO15N65F2 | MTB030N10RQ8

Keywords - TJ9A10M3 MOSFET datasheet

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