TJ9A10M3 Datasheet. Specs and Replacement

Type Designator: TJ9A10M3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO-220SIS

TJ9A10M3 substitution

- MOSFET ⓘ Cross-Reference Search

 

TJ9A10M3 datasheet

 ..1. Size:234K  toshiba
 tj9a10m3.pdf pdf_icon

TJ9A10M3

TJ9A10M3 MOSFETs Silicon P-Channel MOS (U-MOS ) TJ9A10M3 TJ9A10M3 TJ9A10M3 TJ9A10M3 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 120 m (typ.) (VGS = -10 V) (2) Low leakage current IDSS = -10 A (max) (VDS = -100 V) (3) Enhancem... See More ⇒

 ..2. Size:243K  inchange semiconductor
 tj9a10m3.pdf pdf_icon

TJ9A10M3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TJ9A10M3 ITJ9A10M3 FEATURES Low drain-source on-resistance RDS(on) 0.17 . (VGS = -10 V) Enhancement mode Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE M... See More ⇒

Detailed specifications: SSF5510G, SSF6010G, SSF7008, TJ100F04M3L, TJ100F06M3L, TJ150F04M3L, TJ15S10M3, TJ200F04M3L, K2611, TK100A06N1, TK100A08N1, TK100A10N1, TK100E06N1, TK100E08N1, TK100E10N1, TK100L60W, TK100S04N1L

Keywords - TJ9A10M3 MOSFET specs

 TJ9A10M3 cross reference

 TJ9A10M3 equivalent finder

 TJ9A10M3 pdf lookup

 TJ9A10M3 substitution

 TJ9A10M3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility