All MOSFET. TJ9A10M3 Datasheet

 

TJ9A10M3 Datasheet and Replacement


   Type Designator: TJ9A10M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-220SIS
      - MOSFET Cross-Reference Search

 

TJ9A10M3 Datasheet (PDF)

 ..1. Size:234K  toshiba
 tj9a10m3.pdf pdf_icon

TJ9A10M3

TJ9A10M3MOSFETs Silicon P-Channel MOS (U-MOS)TJ9A10M3TJ9A10M3TJ9A10M3TJ9A10M31. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 120 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS = -10 A (max) (VDS = -100 V)(3) Enhancem

 ..2. Size:243K  inchange semiconductor
 tj9a10m3.pdf pdf_icon

TJ9A10M3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TJ9A10M3ITJ9A10M3FEATURESLow drain-source on-resistance:RDS(on) 0.17. (VGS = -10 V)Enhancement mode:Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: R6504KNX | TK16A45D

Keywords - TJ9A10M3 MOSFET datasheet

 TJ9A10M3 cross reference
 TJ9A10M3 equivalent finder
 TJ9A10M3 lookup
 TJ9A10M3 substitution
 TJ9A10M3 replacement

 

 
Back to Top

 


 
.