TK10J80E Datasheet. Specs and Replacement

Type Designator: TK10J80E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-3P

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TK10J80E datasheet

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TK10J80E

TK10J80E MOSFETs Silicon N-Channel MOS ( -MOS ) TK10J80E TK10J80E TK10J80E TK10J80E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.7 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 640 V) (3) Enhancement mode Vth =... See More ⇒

Detailed specifications: TK100E06N1, TK100E08N1, TK100E10N1, TK100L60W, TK100S04N1L, TK10A60W5, TK10A80E, TK10E60W, IRF740, TK10P60W, TK10Q60W, TK10V60W, TK11A65W, TK11P65W, TK11Q65W, TK11S10N1L, TK12A60W

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