All MOSFET. TK10J80E Datasheet

 

TK10J80E Datasheet and Replacement


   Type Designator: TK10J80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-3P
 

 TK10J80E substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK10J80E Datasheet (PDF)

 ..1. Size:226K  toshiba
 tk10j80e.pdf pdf_icon

TK10J80E

TK10J80EMOSFETs Silicon N-Channel MOS (-MOS)TK10J80ETK10J80ETK10J80ETK10J80E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.7 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 640 V)(3) Enhancement mode: Vth =

Datasheet: TK100E06N1 , TK100E08N1 , TK100E10N1 , TK100L60W , TK100S04N1L , TK10A60W5 , TK10A80E , TK10E60W , IRF740 , TK10P60W , TK10Q60W , TK10V60W , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W .

History: JFFC10N65D

Keywords - TK10J80E MOSFET datasheet

 TK10J80E cross reference
 TK10J80E equivalent finder
 TK10J80E lookup
 TK10J80E substitution
 TK10J80E replacement

 

 
Back to Top

 


 
.