All MOSFET. TK10V60W Datasheet

 

TK10V60W Datasheet and Replacement


   Type Designator: TK10V60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: DFN8X8
 

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TK10V60W Datasheet (PDF)

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TK10V60W

TK10V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK10V60WTK10V60WTK10V60WTK10V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

Datasheet: TK100L60W , TK100S04N1L , TK10A60W5 , TK10A80E , TK10E60W , TK10J80E , TK10P60W , TK10Q60W , IRF540 , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , TK12P60W .

History: HM4821 | WML10N65C4

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