TK11P65W Specs and Replacement
Type Designator: TK11P65W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
Package: DPAK
TK11P65W substitution
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TK11P65W datasheet
tk11p65w.pdf
TK11P65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK11P65W TK11P65W TK11P65W TK11P65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.35 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒
Detailed specifications: TK10A60W5 , TK10A80E , TK10E60W , TK10J80E , TK10P60W , TK10Q60W , TK10V60W , TK11A65W , 50N06 , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , TK12P60W , TK12Q60W , TK12V60W .
Keywords - TK11P65W MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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