TK11P65W Datasheet and Replacement
Type Designator: TK11P65W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
Package: DPAK
TK11P65W substitution
TK11P65W Datasheet (PDF)
tk11p65w.pdf
TK11P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK11P65WTK11P65WTK11P65WTK11P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.35 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
Datasheet: TK10A60W5 , TK10A80E , TK10E60W , TK10J80E , TK10P60W , TK10Q60W , TK10V60W , TK11A65W , 50N06 , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , TK12P60W , TK12Q60W , TK12V60W .
History: FQPF4N90
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History: FQPF4N90
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