All MOSFET. TK11P65W Datasheet

 

TK11P65W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK11P65W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 11.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 23 pF

Maximum Drain-Source On-State Resistance (Rds): 0.44 Ohm

Package: DPAK

TK11P65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK11P65W Datasheet (PDF)

1.1. tk11p65w.pdf Size:241K _toshiba2

TK11P65W
TK11P65W

TK11P65W MOSFETs Silicon N-Channel MOS (DTMOS) TK11P65W TK11P65W TK11P65W TK11P65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) En

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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