All MOSFET. TK11Q65W Datasheet

 

TK11Q65W Datasheet and Replacement


   Type Designator: TK11Q65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 11.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: IPAK
 
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TK11Q65W Datasheet (PDF)

 ..1. Size:243K  toshiba
 tk11q65w.pdf pdf_icon

TK11Q65W

TK11Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK11Q65WTK11Q65WTK11Q65WTK11Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.35 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 ..2. Size:233K  inchange semiconductor
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TK11Q65W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK11Q65WITK11Q65WFEATURESLow drain-source on-resistance:RDS(on) 0.44.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =

Datasheet: TK10A80E , TK10E60W , TK10J80E , TK10P60W , TK10Q60W , TK10V60W , TK11A65W , TK11P65W , IRF640 , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , TK12P60W , TK12Q60W , TK12V60W , TK14A65W .

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