TK11Q65W Datasheet. Specs and Replacement

Type Designator: TK11Q65W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: IPAK

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TK11Q65W datasheet

 ..1. Size:243K  toshiba
 tk11q65w.pdf pdf_icon

TK11Q65W

TK11Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK11Q65W TK11Q65W TK11Q65W TK11Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.35 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

 ..2. Size:233K  inchange semiconductor
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TK11Q65W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK11Q65W ITK11Q65W FEATURES Low drain-source on-resistance RDS(on) 0.44 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

Detailed specifications: TK10A80E, TK10E60W, TK10J80E, TK10P60W, TK10Q60W, TK10V60W, TK11A65W, TK11P65W, IRFP460, TK11S10N1L, TK12A60W, TK12E60W, TK12J60W, TK12P60W, TK12Q60W, TK12V60W, TK14A65W

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.