All MOSFET. TK11S10N1L Datasheet

 

TK11S10N1L Datasheet and Replacement


   Type Designator: TK11S10N1L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: DPAK
 

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TK11S10N1L Datasheet (PDF)

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TK11S10N1L

TK11S10N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK11S10N1LTK11S10N1LTK11S10N1LTK11S10N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS

Datasheet: TK10E60W , TK10J80E , TK10P60W , TK10Q60W , TK10V60W , TK11A65W , TK11P65W , TK11Q65W , IRFZ44 , TK12A60W , TK12E60W , TK12J60W , TK12P60W , TK12Q60W , TK12V60W , TK14A65W , TK14A65W5 .

History: 2N7261U | VP0106

Keywords - TK11S10N1L MOSFET datasheet

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