TK11S10N1L Datasheet. Specs and Replacement

Type Designator: TK11S10N1L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: DPAK

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TK11S10N1L datasheet

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TK11S10N1L

TK11S10N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK11S10N1L TK11S10N1L TK11S10N1L TK11S10N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS... See More ⇒

Detailed specifications: TK10E60W, TK10J80E, TK10P60W, TK10Q60W, TK10V60W, TK11A65W, TK11P65W, TK11Q65W, IRFZ44, TK12A60W, TK12E60W, TK12J60W, TK12P60W, TK12Q60W, TK12V60W, TK14A65W, TK14A65W5

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