All MOSFET. TK12V60W Datasheet

 

TK12V60W Datasheet and Replacement


   Type Designator: TK12V60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: DFN8X8
 

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TK12V60W Datasheet (PDF)

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TK12V60W

TK12V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12V60WTK12V60WTK12V60WTK12V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

Datasheet: TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , TK12P60W , TK12Q60W , 10N60 , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 , TK14E65W , TK14E65W5 , TK14G65W , TK14G65W5 .

History: TTB145N06A | LNG045R140 | AP2604CDT

Keywords - TK12V60W MOSFET datasheet

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