TK12V60W Datasheet. Specs and Replacement
Type Designator: TK12V60W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 23 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: DFN8X8
TK12V60W substitution
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TK12V60W datasheet
tk12v60w.pdf
TK12V60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12V60W TK12V60W TK12V60W TK12V60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
Detailed specifications: TK11P65W, TK11Q65W, TK11S10N1L, TK12A60W, TK12E60W, TK12J60W, TK12P60W, TK12Q60W, IRFP260N, TK14A65W, TK14A65W5, TK14C65W, TK14C65W5, TK14E65W, TK14E65W5, TK14G65W, TK14G65W5
Keywords - TK12V60W MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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