TK12V60W Datasheet and Replacement
Type Designator: TK12V60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: DFN8X8
TK12V60W substitution
TK12V60W Datasheet (PDF)
tk12v60w.pdf
TK12V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12V60WTK12V60WTK12V60WTK12V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
Datasheet: TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , TK12P60W , TK12Q60W , IRFP260N , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 , TK14E65W , TK14E65W5 , TK14G65W , TK14G65W5 .
History: SSF2816EB
Keywords - TK12V60W MOSFET datasheet
TK12V60W cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SSF2816EB
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