All MOSFET. TK14C65W Datasheet

 

TK14C65W Datasheet and Replacement


   Type Designator: TK14C65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: I2PAK
 

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TK14C65W Datasheet (PDF)

 ..1. Size:241K  toshiba
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TK14C65W

TK14C65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14C65WTK14C65WTK14C65WTK14C65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 0.1. Size:237K  toshiba
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TK14C65W

TK14C65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14C65W5TK14C65W5TK14C65W5TK14C65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

Datasheet: TK12A60W , TK12E60W , TK12J60W , TK12P60W , TK12Q60W , TK12V60W , TK14A65W , TK14A65W5 , IRFB4115 , TK14C65W5 , TK14E65W , TK14E65W5 , TK14G65W , TK14G65W5 , TK14N65W , TK14N65W5 , TK14V65W .

History: NCE4606B

Keywords - TK14C65W MOSFET datasheet

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