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TK14G65W Specs and Replacement


   Type Designator: TK14G65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: D2PAK
 

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TK14G65W datasheet

 ..1. Size:240K  toshiba
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TK14G65W

TK14G65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK14G65W TK14G65W TK14G65W TK14G65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.22 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

 0.1. Size:237K  toshiba
tk14g65w5.pdf pdf_icon

TK14G65W

TK14G65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK14G65W5 TK14G65W5 TK14G65W5 TK14G65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.25 (typ.) by using Super Junction Struc... See More ⇒

Detailed specifications: TK12Q60W , TK12V60W , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 , TK14E65W , TK14E65W5 , 2N7000 , TK14G65W5 , TK14N65W , TK14N65W5 , TK14V65W , TK15S04N1L , TK160F10N1 , TK16A60W , TK16A60W5 .

History: SI2319 | AGM12T12D | TK16A60W | AGM038N10A | RD3P130SP | AGM20P22AS | IRHM7264SE

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