TK14G65W Specs and Replacement
Type Designator: TK14G65W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: D2PAK
TK14G65W substitution
TK14G65W datasheet
tk14g65w.pdf
TK14G65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK14G65W TK14G65W TK14G65W TK14G65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.22 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒
tk14g65w5.pdf
TK14G65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK14G65W5 TK14G65W5 TK14G65W5 TK14G65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.25 (typ.) by using Super Junction Struc... See More ⇒
Detailed specifications: TK12Q60W , TK12V60W , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 , TK14E65W , TK14E65W5 , 2N7000 , TK14G65W5 , TK14N65W , TK14N65W5 , TK14V65W , TK15S04N1L , TK160F10N1 , TK16A60W , TK16A60W5 .
History: SI2319 | AGM12T12D | TK16A60W | AGM038N10A | RD3P130SP | AGM20P22AS | IRHM7264SE
Keywords - TK14G65W MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI2319 | AGM12T12D | TK16A60W | AGM038N10A | RD3P130SP | AGM20P22AS | IRHM7264SE
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