All MOSFET. TK15S04N1L Datasheet

 

TK15S04N1L MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK15S04N1L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0178 Ohm
   Package: DPAK

 TK15S04N1L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK15S04N1L Datasheet (PDF)

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 tk15s04n1l.pdf

TK15S04N1L TK15S04N1L

TK15S04N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK15S04N1LTK15S04N1LTK15S04N1LTK15S04N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 13.7 m (typ.)(2) Low leakage current: IDSS = 10 A (

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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