TK160F10N1 Datasheet. Specs and Replacement

Type Designator: TK160F10N1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 3960 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO-220SM

TK160F10N1 substitution

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TK160F10N1 datasheet

 ..1. Size:341K  toshiba
 tk160f10n1.pdf pdf_icon

TK160F10N1

TK160F10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK160F10N1 TK160F10N1 TK160F10N1 TK160F10N1 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.0 m (typ.) (VGS = 10 V) (2) Lo... See More ⇒

 9.1. Size:1326K  jiejie micro
 jmtk160p03a.pdf pdf_icon

TK160F10N1

-30V, -39A, 13.7m P-channel Power Trench MOSFET JMTK160P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -39 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 9.6 mW RDS(ON)_Typ(@VGS=-4.5V 13.7 mW Applications Load Sw... See More ⇒

Detailed specifications: TK14E65W, TK14E65W5, TK14G65W, TK14G65W5, TK14N65W, TK14N65W5, TK14V65W, TK15S04N1L, IRF9540, TK16A60W, TK16A60W5, TK16C60W, TK16E60W, TK16E60W5, TK16G60W, TK16G60W5, TK16J60W

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