All MOSFET. TK160F10N1 Datasheet

 

TK160F10N1 Datasheet and Replacement


   Type Designator: TK160F10N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 3960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO-220SM
 

 TK160F10N1 substitution

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TK160F10N1 Datasheet (PDF)

 ..1. Size:341K  toshiba
 tk160f10n1.pdf pdf_icon

TK160F10N1

TK160F10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK160F10N1TK160F10N1TK160F10N1TK160F10N11. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.0 m (typ.) (VGS = 10 V)(2) Lo

 9.1. Size:1326K  jiejie micro
 jmtk160p03a.pdf pdf_icon

TK160F10N1

-30V, -39A, 13.7m P-channel Power Trench MOSFETJMTK160P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.6 V Halogen-free; RoHS-compliantID(@VGS=-10V) -39 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 9.6 mWRDS(ON)_Typ(@VGS=-4.5V 13.7 mWApplications Load Sw

Datasheet: TK14E65W , TK14E65W5 , TK14G65W , TK14G65W5 , TK14N65W , TK14N65W5 , TK14V65W , TK15S04N1L , K3569 , TK16A60W , TK16A60W5 , TK16C60W , TK16E60W , TK16E60W5 , TK16G60W , TK16G60W5 , TK16J60W .

History: HSM20N02 | JCS11N90ABT | OSG70R350AF

Keywords - TK160F10N1 MOSFET datasheet

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