All MOSFET. TK160F10N1 Datasheet

 

TK160F10N1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK160F10N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 121 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 3960 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO-220SM

 TK160F10N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK160F10N1 Datasheet (PDF)

 ..1. Size:341K  toshiba
 tk160f10n1.pdf

TK160F10N1 TK160F10N1

TK160F10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK160F10N1TK160F10N1TK160F10N1TK160F10N11. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.0 m (typ.) (VGS = 10 V)(2) Lo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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