All MOSFET. TK16E60W Datasheet

 

TK16E60W Datasheet and Replacement


   Type Designator: TK16E60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id| ⓘ - Maximum Drain Current: 15.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 38 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220
 

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TK16E60W Datasheet (PDF)

 ..1. Size:251K  toshiba
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TK16E60W

TK16E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16E60WTK16E60WTK16E60WTK16E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 ..2. Size:246K  inchange semiconductor
tk16e60w.pdf pdf_icon

TK16E60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16E60WITK16E60WFEATURESLow drain-source on-resistance:RDS(on) 0.19.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.79mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:250K  toshiba
tk16e60w5.pdf pdf_icon

TK16E60W

TK16E60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16E60W5TK16E60W5TK16E60W5TK16E60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 0.2. Size:246K  inchange semiconductor
tk16e60w5.pdf pdf_icon

TK16E60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16E60W5ITK16E60W5FEATURESLow drain-source on-resistance:RDS(on) 0.23.Enhancement mode:Vth =3.0 to 4.5V (VDS = 10 V, ID=0.79mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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