TK16E60W Datasheet and Replacement. Cross Reference Search

TK16E60W Datasheet (PDF)

..1. Size:251K toshiba
tk16e60w.pdf pdf_icon

TK16E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16E60WTK16E60WTK16E60WTK16E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

..2. Size:246K inchange semiconductor
tk16e60w.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16E60WITK16E60WFEATURESLow drain-source on-resistance:RDS(on) 0.19.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.79mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

0.1. Size:250K toshiba
tk16e60w5.pdf pdf_icon

TK16E60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16E60W5TK16E60W5TK16E60W5TK16E60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

0.2. Size:246K inchange semiconductor
tk16e60w5.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16E60W5ITK16E60W5FEATURESLow drain-source on-resistance:RDS(on) 0.23.Enhancement mode:Vth =3.0 to 4.5V (VDS = 10 V, ID=0.79mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Datasheet: TK14N65W , TK14N65W5 , TK14V65W , TK15S04N1L , TK160F10N1 , TK16A60W , TK16A60W5 , TK16C60W , K4145 , TK16E60W5 , TK16G60W , TK16G60W5 , TK16J60W , TK16J60W5 , TK16N60W , TK16N60W5 , TK16V60W .