All MOSFET. TK16N60W Datasheet

 

TK16N60W Datasheet and Replacement


   Type Designator: TK16N60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-247
 

 TK16N60W substitution

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TK16N60W Datasheet (PDF)

 ..1. Size:249K  toshiba
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TK16N60W

TK16N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16N60WTK16N60WTK16N60WTK16N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 0.1. Size:246K  toshiba
 tk16n60w5.pdf pdf_icon

TK16N60W

TK16N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16N60W5TK16N60W5TK16N60W5TK16N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 9.1. Size:178K  st
 stk16n10l.pdf pdf_icon

TK16N60W

Datasheet: TK16A60W5 , TK16C60W , TK16E60W , TK16E60W5 , TK16G60W , TK16G60W5 , TK16J60W , TK16J60W5 , 8205A , TK16N60W5 , TK16V60W , TK16V60W5 , TK17A80W , TK17C65W , TK17E65W , TK17N65W , TK17V65W .

History: BUK9K6R8-40E

Keywords - TK16N60W MOSFET datasheet

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