All MOSFET. TK16V60W Datasheet

 

TK16V60W MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK16V60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 15.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: DFN8X8

 TK16V60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK16V60W Datasheet (PDF)

 ..1. Size:251K  toshiba
 tk16v60w.pdf

TK16V60W TK16V60W

TK16V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16V60WTK16V60WTK16V60WTK16V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 0.1. Size:275K  toshiba
 tk16v60w5.pdf

TK16V60W TK16V60W

TK16V60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16V60W5TK16V60W5TK16V60W5TK16V60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.196 (typ.)(3) Easy to control Gate switc

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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