TK16V60W5 Datasheet. Specs and Replacement

Type Designator: TK16V60W5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.245 Ohm

Package: DFN8X8

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TK16V60W5 datasheet

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TK16V60W5

TK16V60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16V60W5 TK16V60W5 TK16V60W5 TK16V60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.196 (typ.) (3) Easy to control Gate switc... See More ⇒

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TK16V60W5

TK16V60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16V60W TK16V60W TK16V60W TK16V60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

Detailed specifications: TK16E60W5, TK16G60W, TK16G60W5, TK16J60W, TK16J60W5, TK16N60W, TK16N60W5, TK16V60W, IRLB4132, TK17A80W, TK17C65W, TK17E65W, TK17N65W, TK17V65W, TK18E10K3, TK200F04N1L, TK20A60W

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