TK16V60W5 Datasheet and Replacement
Type Designator: TK16V60W5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.245 Ohm
Package: DFN8X8
TK16V60W5 substitution
TK16V60W5 Datasheet (PDF)
tk16v60w5.pdf

TK16V60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16V60W5TK16V60W5TK16V60W5TK16V60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.196 (typ.)(3) Easy to control Gate switc
tk16v60w.pdf

TK16V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16V60WTK16V60WTK16V60WTK16V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
Datasheet: TK16E60W5 , TK16G60W , TK16G60W5 , TK16J60W , TK16J60W5 , TK16N60W , TK16N60W5 , TK16V60W , IRF9540N , TK17A80W , TK17C65W , TK17E65W , TK17N65W , TK17V65W , TK18E10K3 , TK200F04N1L , TK20A60W .
History: FDP8443 | IPB65R190E6
Keywords - TK16V60W5 MOSFET datasheet
TK16V60W5 cross reference
TK16V60W5 equivalent finder
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History: FDP8443 | IPB65R190E6



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