TK17V65W Datasheet. Specs and Replacement

Type Designator: TK17V65W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: DFN8X8

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TK17V65W datasheet

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TK17V65W

TK17V65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK17V65W TK17V65W TK17V65W TK17V65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.175 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enha... See More ⇒

Detailed specifications: TK16N60W, TK16N60W5, TK16V60W, TK16V60W5, TK17A80W, TK17C65W, TK17E65W, TK17N65W, 5N65, TK18E10K3, TK200F04N1L, TK20A60W, TK20A60W5, TK20C60W, TK20E60W, TK20E60W5, TK20G60W

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