TK17V65W Datasheet and Replacement
Type Designator: TK17V65W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: DFN8X8
TK17V65W substitution
TK17V65W Datasheet (PDF)
tk17v65w.pdf

TK17V65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17V65WTK17V65WTK17V65WTK17V65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.175 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha
Datasheet: TK16N60W , TK16N60W5 , TK16V60W , TK16V60W5 , TK17A80W , TK17C65W , TK17E65W , TK17N65W , 4435 , TK18E10K3 , TK200F04N1L , TK20A60W , TK20A60W5 , TK20C60W , TK20E60W , TK20E60W5 , TK20G60W .
History: NCEP0220F | AFN4412 | SSF65R090S2
Keywords - TK17V65W MOSFET datasheet
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History: NCEP0220F | AFN4412 | SSF65R090S2



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