TK18E10K3 Datasheet. Specs and Replacement

Type Designator: TK18E10K3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO-220

TK18E10K3 substitution

- MOSFET ⓘ Cross-Reference Search

 

TK18E10K3 datasheet

 ..1. Size:240K  toshiba
 tk18e10k3.pdf pdf_icon

TK18E10K3

TK18E10K3 MOSFETs Silicon N-channel MOS (U-MOS ) TK18E10K3 TK18E10K3 TK18E10K3 TK18E10K3 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 33 m (typ.) (2) High forward transfer admittance Yfs = 28 S (typ.) (3) Low leakage current ... See More ⇒

 ..2. Size:246K  inchange semiconductor
 tk18e10k3.pdf pdf_icon

TK18E10K3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK18E10K3 ITK18E10K3 FEATURES Low drain-source on-resistance RDS(on) 0.042 . Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

Detailed specifications: TK16N60W5, TK16V60W, TK16V60W5, TK17A80W, TK17C65W, TK17E65W, TK17N65W, TK17V65W, IRF1010E, TK200F04N1L, TK20A60W, TK20A60W5, TK20C60W, TK20E60W, TK20E60W5, TK20G60W, TK20J60W

Keywords - TK18E10K3 MOSFET specs

 TK18E10K3 cross reference

 TK18E10K3 equivalent finder

 TK18E10K3 pdf lookup

 TK18E10K3 substitution

 TK18E10K3 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.