TK18E10K3 MOSFET. Datasheet pdf. Equivalent
Type Designator: TK18E10K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 33 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm
Package: TO-220
TK18E10K3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK18E10K3 Datasheet (PDF)
tk18e10k3.pdf
TK18E10K3MOSFETs Silicon N-channel MOS (U-MOS)TK18E10K3TK18E10K3TK18E10K3TK18E10K31. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 33 m (typ.)(2) High forward transfer admittance: |Yfs| = 28 S (typ.)(3) Low leakage current:
tk18e10k3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK18E10K3ITK18E10K3FEATURESLow drain-source on-resistance:RDS(on) 0.042.Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HGP130N12S
