All MOSFET. TK18E10K3 Datasheet

 

TK18E10K3 Datasheet and Replacement


   Type Designator: TK18E10K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-220
 

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TK18E10K3 Datasheet (PDF)

 ..1. Size:240K  toshiba
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TK18E10K3

TK18E10K3MOSFETs Silicon N-channel MOS (U-MOS)TK18E10K3TK18E10K3TK18E10K3TK18E10K31. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 33 m (typ.)(2) High forward transfer admittance: |Yfs| = 28 S (typ.)(3) Low leakage current:

 ..2. Size:246K  inchange semiconductor
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TK18E10K3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK18E10K3ITK18E10K3FEATURESLow drain-source on-resistance:RDS(on) 0.042.Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Datasheet: TK16N60W5 , TK16V60W , TK16V60W5 , TK17A80W , TK17C65W , TK17E65W , TK17N65W , TK17V65W , IRF530 , TK200F04N1L , TK20A60W , TK20A60W5 , TK20C60W , TK20E60W , TK20E60W5 , TK20G60W , TK20J60W .

History: TDM3458 | AM90N06-04M2B | VBZE04N03 | SSM3K56CT | AUIRFP4227 | IXTJ3N150 | UTC654

Keywords - TK18E10K3 MOSFET datasheet

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