TK200F04N1L MOSFET. Datasheet pdf. Equivalent
Type Designator: TK200F04N1L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 214 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 7680 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
Package: TO-220SM
TK200F04N1L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK200F04N1L Datasheet (PDF)
tk200f04n1l.pdf
TK200F04N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK200F04N1LTK200F04N1LTK200F04N1LTK200F04N1L1. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.78 m (typ.) (VGS = 10 V)
ixtk200n10p.pdf
VDSS = 100 VIXTK 200N10PPolarHTTMID25 = 200 APower MOSFET RDS(on) 7.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 200 AD(TAB)SID
ftk2005dfn23.pdf
SEMICONDUCTORFTK2005DFN23TECHNICAL DATADFNWB2 3-6L-CDual N-Channel MOSFETID V(BR)DSS RDS(on)MAX 13 Vm@10 14 @4.5Vm 15.5m@3.8V8A20V.5V 19m@227m@1.8VDESCRIPTIONThe FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge.It is ESD protected. This device is suitable for use as a uni-directional or bi-direction
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IXTX90P20P | BSC080P03LSG | BLP039N08-B | BLF7G22L-130 | BMS4003
History: IXTX90P20P | BSC080P03LSG | BLP039N08-B | BLF7G22L-130 | BMS4003
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