TK200F04N1L Datasheet. Specs and Replacement

Type Designator: TK200F04N1L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 214 nC

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 7680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm

Package: TO-220SM

TK200F04N1L substitution

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TK200F04N1L datasheet

 ..1. Size:273K  toshiba
 tk200f04n1l.pdf pdf_icon

TK200F04N1L

TK200F04N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK200F04N1L TK200F04N1L TK200F04N1L TK200F04N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.78 m (typ.) (VGS = 10 V) ... See More ⇒

 9.1. Size:162K  ixys
 ixtk200n10p.pdf pdf_icon

TK200F04N1L

VDSS = 100 V IXTK 200N10P PolarHTTM ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 200 A D (TAB) S ID... See More ⇒

 9.2. Size:818K  first silicon
 ftk2005dfn23.pdf pdf_icon

TK200F04N1L

SEMICONDUCTOR FTK2005DFN23 TECHNICAL DATA DFNWB2 3-6L-C Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX 13 V m @10 14 @4.5V m 15.5m @3.8V 8 A 20V .5V 19m @2 27m @1.8V DESCRIPTION The FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-direction... See More ⇒

 9.3. Size:883K  jiejie micro
 jmtk2007a.pdf pdf_icon

TK200F04N1L

JMTK2007A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 50A Load Switch RDS(ON) ... See More ⇒

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Detailed specifications: TK16V60W, TK16V60W5, TK17A80W, TK17C65W, TK17E65W, TK17N65W, TK17V65W, TK18E10K3, IRFB3607, TK20A60W, TK20A60W5, TK20C60W, TK20E60W, TK20E60W5, TK20G60W, TK20J60W, TK20J60W5

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