TK20V60W5 Datasheet. Specs and Replacement

Type Designator: TK20V60W5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 55 nC

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: DFN8X8

TK20V60W5 substitution

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TK20V60W5 datasheet

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TK20V60W5

TK20V60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20V60W5 TK20V60W5 TK20V60W5 TK20V60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.156 (typ.) (3) Easy to control Gate switc... See More ⇒

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TK20V60W5

TK20V60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20V60W TK20V60W TK20V60W TK20V60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.136 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

Detailed specifications: TK20E60W, TK20E60W5, TK20G60W, TK20J60W, TK20J60W5, TK20N60W, TK20N60W5, TK20V60W, IRFP250, TK22A10N1, TK22E10N1, TK25A60X, TK25A60X5, TK25E60X, TK25E60X5, TK25N60X, TK25N60X5

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