TK22E10N1 Datasheet. Specs and Replacement
Type Designator: TK22E10N1 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0138 Ohm
Package: TO-220
TK22E10N1 substitution
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TK22E10N1 datasheet
tk22e10n1.pdf
TK22E10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK22E10N1 TK22E10N1 TK22E10N1 TK22E10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 11.5 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enh... See More ⇒
tk22e10n1.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK22E10N1 ITK22E10N1 FEATURES Low drain-source on-resistance RDS(on) 13.8m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI... See More ⇒
Detailed specifications: TK20G60W, TK20J60W, TK20J60W5, TK20N60W, TK20N60W5, TK20V60W, TK20V60W5, TK22A10N1, 2SK3568, TK25A60X, TK25A60X5, TK25E60X, TK25E60X5, TK25N60X, TK25N60X5, TK25S06N1L, TK25V60X
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