TK25N60X Datasheet and Replacement
Type Designator: TK25N60X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO-247
TK25N60X substitution
TK25N60X Datasheet (PDF)
tk25n60x.pdf

TK25N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25N60XTK25N60XTK25N60XTK25N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
tk25n60x5.pdf

TK25N60X5MOSFETs Silicon N-Channel MOS (DTMOS-H)TK25N60X5TK25N60X5TK25N60X5TK25N60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns(typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(3) Easy to control Gate switc
ftk25n03pdfn33.pdf

SEMICONDUCTORFTK25N03PDFN33TECHNICAL DATAN-Channel Power MOSFET PDFN3.33.3-8L-A DESCRIPTION The FTK25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Battery switch Good stability and uniformity with high EAS Load switch Excellent package for good he
Datasheet: TK20V60W , TK20V60W5 , TK22A10N1 , TK22E10N1 , TK25A60X , TK25A60X5 , TK25E60X , TK25E60X5 , 7N60 , TK25N60X5 , TK25S06N1L , TK25V60X , TK25V60X5 , TK28A65W , TK28E65W , TK28N65W , TK28N65W5 .
History: UTT4850L-S08-R | CS30N10U | APT7575AN
Keywords - TK25N60X MOSFET datasheet
TK25N60X cross reference
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History: UTT4850L-S08-R | CS30N10U | APT7575AN



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