All MOSFET. TK25S06N1L Datasheet

 

TK25S06N1L Datasheet and Replacement


   Type Designator: TK25S06N1L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
   Package: DPAK
 

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TK25S06N1L Datasheet (PDF)

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TK25S06N1L

TK25S06N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK25S06N1LTK25S06N1LTK25S06N1LTK25S06N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 15 m (typ.) (VGS = 10 V)(3) L

Datasheet: TK22A10N1 , TK22E10N1 , TK25A60X , TK25A60X5 , TK25E60X , TK25E60X5 , TK25N60X , TK25N60X5 , 20N50 , TK25V60X , TK25V60X5 , TK28A65W , TK28E65W , TK28N65W , TK28N65W5 , TK28V65W , TK2P90E .

History: JFAM30N50E | MG065R060 | JFAM50N50C | SDF21N60GAF | JFPC10N65D | JCS3N80S | MP10N60EIC

Keywords - TK25S06N1L MOSFET datasheet

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