All MOSFET. TK25V60X5 Datasheet

 

TK25V60X5 Datasheet and Replacement


   Type Designator: TK25V60X5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: DFN8X8
 

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TK25V60X5 Datasheet (PDF)

 ..1. Size:365K  toshiba
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TK25V60X5

TK25V60X5MOSFETs Silicon N-Channel MOS (DTMOS)TK25V60X5TK25V60X5TK25V60X5TK25V60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.125 (typ.)(3) Easy to control Gate switc

 6.1. Size:238K  toshiba
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TK25V60X5

TK25V60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25V60XTK25V60XTK25V60XTK25V60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties with

Datasheet: TK25A60X , TK25A60X5 , TK25E60X , TK25E60X5 , TK25N60X , TK25N60X5 , TK25S06N1L , TK25V60X , IRFB31N20D , TK28A65W , TK28E65W , TK28N65W , TK28N65W5 , TK28V65W , TK2P90E , TK30A06N1 , TK30E06N1 .

History: AP60SL280AIN | STD5407N | CHT84WGP | IRLR8256PBF | AP4813GSM-HF | AP60AN750IN | AOTF11S60

Keywords - TK25V60X5 MOSFET datasheet

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