All MOSFET. TK28E65W Datasheet

 

TK28E65W Datasheet and Replacement


   Type Designator: TK28E65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 27.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 75 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-220
 

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TK28E65W Datasheet (PDF)

 ..1. Size:307K  toshiba
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TK28E65W

TK28E65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28E65WTK28E65WTK28E65WTK28E65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha

 ..2. Size:246K  inchange semiconductor
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TK28E65W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK28E65WITK28E65WFEATURESLow drain-source on-resistance:RDS(on) 0.11.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=1.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SIHP20N50E | SPP24N60CFD | SIHP25N50E | IPP50R250CP

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