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TK31A60W Specs and Replacement

Type Designator: TK31A60W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm

Package: TO-220SIS

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TK31A60W datasheet

 ..1. Size:250K  toshiba
 tk31a60w.pdf pdf_icon

TK31A60W

TK31A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31A60W TK31A60W TK31A60W TK31A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 ..2. Size:253K  inchange semiconductor
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TK31A60W

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK31A60W, ITK31A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.073 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regul... See More ⇒

Detailed specifications: TK28A65W, TK28E65W, TK28N65W, TK28N65W5, TK28V65W, TK2P90E, TK30A06N1, TK30E06N1, STP65NF06, TK31E60W, TK31E60X, TK31J60W, TK31J60W5, TK31N60W, TK31N60W5, TK31N60X, TK31V60W

Keywords - TK31A60W MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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