TK32E12N1 MOSFET. Datasheet pdf. Equivalent
Type Designator: TK32E12N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 34 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0138 Ohm
Package: TO-220
TK32E12N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK32E12N1 Datasheet (PDF)
tk32e12n1.pdf
TK32E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK32E12N1TK32E12N1TK32E12N1TK32E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 11.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enh
tk32e12n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK32E12N1ITK32E12N1FEATURESLow drain-source on-resistance:RDS(on) 13.8m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI
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