TK34E10N1 PDF and Equivalents Search

 

TK34E10N1 Specs and Replacement

Type Designator: TK34E10N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 103 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO-220

TK34E10N1 substitution

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TK34E10N1 datasheet

 ..1. Size:255K  toshiba
 tk34e10n1.pdf pdf_icon

TK34E10N1

TK34E10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK34E10N1 TK34E10N1 TK34E10N1 TK34E10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 7.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha... See More ⇒

 ..2. Size:246K  inchange semiconductor
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TK34E10N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK34E10N1 ITK34E10N1 FEATURES Low drain-source on-resistance RDS(on) 9.5m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIM... See More ⇒

Detailed specifications: TK31N60X, TK31V60W, TK31V60W5, TK31V60X, TK32A12N1, TK32E12N1, TK33S10N1Z, TK34A10N1, AO4407A, TK35A08N1, TK35A65W, TK35A65W5, TK35E08N1, TK35N65W, TK35N65W5, TK39A60W, TK39J60W

Keywords - TK34E10N1 MOSFET specs

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