TK35E08N1 PDF and Equivalents Search

 

TK35E08N1 Specs and Replacement

Type Designator: TK35E08N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm

Package: TO-220

TK35E08N1 substitution

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TK35E08N1 datasheet

 ..1. Size:245K  toshiba
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TK35E08N1

TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK35E08N1 TK35E08N1 TK35E08N1 TK35E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 10.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enha... See More ⇒

 ..2. Size:246K  inchange semiconductor
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TK35E08N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK35E08N1 ITK35E08N1 FEATURES Low drain-source on-resistance RDS(on) 12.2m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI... See More ⇒

Detailed specifications: TK32A12N1, TK32E12N1, TK33S10N1Z, TK34A10N1, TK34E10N1, TK35A08N1, TK35A65W, TK35A65W5, IRF730, TK35N65W, TK35N65W5, TK39A60W, TK39J60W, TK39J60W5, TK39N60W, TK39N60W5, TK39N60X

Keywords - TK35E08N1 MOSFET specs

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