All MOSFET. TK35E08N1 Datasheet

 

TK35E08N1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK35E08N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0122 Ohm
   Package: TO-220

 TK35E08N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK35E08N1 Datasheet (PDF)

 ..1. Size:245K  toshiba
 tk35e08n1.pdf

TK35E08N1 TK35E08N1

TK35E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK35E08N1TK35E08N1TK35E08N1TK35E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 10.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enha

 ..2. Size:246K  inchange semiconductor
 tk35e08n1.pdf

TK35E08N1 TK35E08N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK35E08N1ITK35E08N1FEATURESLow drain-source on-resistance:RDS(on) 12.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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