TK39A60W MOSFET Datasheet: N-Ch, 600V, 38.8A. Full specification with pinout and replacement list

TK39A60W Specs and Replacement

Type Designator: TK39A60W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO-220SIS

TK39A60W substitution

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TK39A60W datasheet

..1. Size:235K toshiba
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TK39A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK39A60W TK39A60W TK39A60W TK39A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

..2. Size:254K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK39A60W ITK39A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.065 Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.9mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ... See More ⇒

Detailed specifications: TK34A10N1, TK34E10N1, TK35A08N1, TK35A65W, TK35A65W5, TK35E08N1, TK35N65W, TK35N65W5, IRF740, TK39J60W, TK39J60W5, TK39N60W, TK39N60W5, TK39N60X, TK3P80E, TK40A06N1, TK40E06N1