All MOSFET. TK40S06N1L Datasheet

 

TK40S06N1L Datasheet and Replacement


   Type Designator: TK40S06N1L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 835 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DPAK
 

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TK40S06N1L Datasheet (PDF)

 ..1. Size:258K  toshiba
 tk40s06n1l.pdf pdf_icon

TK40S06N1L

TK40S06N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK40S06N1LTK40S06N1LTK40S06N1LTK40S06N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDS

 9.1. Size:243K  toshiba
 tk40s10k3z.pdf pdf_icon

TK40S06N1L

TK40S10K3ZMOSFETs Silicon N-channel MOS (U-MOS )TK40S10K3ZTK40S10K3ZTK40S10K3ZTK40S10K3Z1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 14.4 m (typ.) (VGS = 10 V)(2) Low leakage curren

Datasheet: TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 , TK39N60X , TK3P80E , TK40A06N1 , TK40E06N1 , IRF1404 , TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 , TK46E08N1 , TK49N65W , TK49N65W5 , TK4P60D .

History: 4N60G-TN3-R

Keywords - TK40S06N1L MOSFET datasheet

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