TK40S06N1L MOSFET. Datasheet pdf. Equivalent
Type Designator: TK40S06N1L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 88.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 835 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DPAK
TK40S06N1L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK40S06N1L Datasheet (PDF)
tk40s06n1l.pdf
TK40S06N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK40S06N1LTK40S06N1LTK40S06N1LTK40S06N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDS
tk40s10k3z.pdf
TK40S10K3ZMOSFETs Silicon N-channel MOS (U-MOS )TK40S10K3ZTK40S10K3ZTK40S10K3ZTK40S10K3Z1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 14.4 m (typ.) (VGS = 10 V)(2) Low leakage curren
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