All MOSFET. TK4Q60DA Datasheet

 

TK4Q60DA Datasheet and Replacement


   Type Designator: TK4Q60DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: PW-MOLD2
 

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TK4Q60DA Datasheet (PDF)

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TK4Q60DA

TK4Q60DAMOSFETs Silicon N-Channel MOS (-MOS)TK4Q60DATK4Q60DATK4Q60DATK4Q60DA1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.7 (typ.) (VGS = 10 V)(2) High forward transfer admittance: |Yfs| = 2.2 S (typ.)(3) Low leakage

Datasheet: TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 , TK46E08N1 , TK49N65W , TK49N65W5 , TK4P60D , IRFB4110 , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 , TK56E12N1 , TK58A06N1 , TK58E06N1 , TK5A60W .

History: IXFT30N60X | APQ84SN06A

Keywords - TK4Q60DA MOSFET datasheet

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