TK4Q60DA PDF and Equivalents Search

 

TK4Q60DA Specs and Replacement

Type Designator: TK4Q60DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: PW-MOLD2

TK4Q60DA substitution

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TK4Q60DA datasheet

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TK4Q60DA

TK4Q60DA MOSFETs Silicon N-Channel MOS ( -MOS ) TK4Q60DA TK4Q60DA TK4Q60DA TK4Q60DA 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.7 (typ.) (VGS = 10 V) (2) High forward transfer admittance Yfs = 2.2 S (typ.) (3) Low leakage... See More ⇒

Detailed specifications: TK42A12N1, TK42E12N1, TK45S06K3L, TK46A08N1, TK46E08N1, TK49N65W, TK49N65W5, TK4P60D, AON6414A, TK50A04K3, TK50S04K3L, TK55S10N1, TK56A12N1, TK56E12N1, TK58A06N1, TK58E06N1, TK5A60W

Keywords - TK4Q60DA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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