All MOSFET. TK50A04K3 Datasheet

 

TK50A04K3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK50A04K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 102 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220SIS

 TK50A04K3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK50A04K3 Datasheet (PDF)

 ..1. Size:222K  toshiba
 tk50a04k3.pdf

TK50A04K3 TK50A04K3

TK50A04K3MOSFETs Silicon N-channel MOS (U-MOS)TK50A04K3TK50A04K3TK50A04K3TK50A04K31. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10

 ..2. Size:252K  inchange semiconductor
 tk50a04k3.pdf

TK50A04K3 TK50A04K3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK50A04K3ITK50A04K3FEATURESLow drain-source on-resistance:RDS(ON) = 3.5m (VGS = 10 V)Enhancement mode:Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMU

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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