All MOSFET. TK50A04K3 Datasheet

 

TK50A04K3 Datasheet and Replacement


   Type Designator: TK50A04K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 102 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220SIS
 

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TK50A04K3 Datasheet (PDF)

 ..1. Size:222K  toshiba
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TK50A04K3

TK50A04K3MOSFETs Silicon N-channel MOS (U-MOS)TK50A04K3TK50A04K3TK50A04K3TK50A04K31. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10

 ..2. Size:252K  inchange semiconductor
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TK50A04K3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK50A04K3ITK50A04K3FEATURESLow drain-source on-resistance:RDS(ON) = 3.5m (VGS = 10 V)Enhancement mode:Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMU

Datasheet: TK42E12N1 , TK45S06K3L , TK46A08N1 , TK46E08N1 , TK49N65W , TK49N65W5 , TK4P60D , TK4Q60DA , IRFB4115 , TK50S04K3L , TK55S10N1 , TK56A12N1 , TK56E12N1 , TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 .

History: STF6N60M2 | NTMD4840N | SI2323CDS

Keywords - TK50A04K3 MOSFET datasheet

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