TK50A04K3 PDF and Equivalents Search

 

TK50A04K3 Specs and Replacement

Type Designator: TK50A04K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-220SIS

TK50A04K3 substitution

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TK50A04K3 datasheet

 ..1. Size:222K  toshiba
tk50a04k3.pdf pdf_icon

TK50A04K3

TK50A04K3 MOSFETs Silicon N-channel MOS (U-MOS ) TK50A04K3 TK50A04K3 TK50A04K3 TK50A04K3 1. Applications 1. Applications 1. Applications 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 ... See More ⇒

 ..2. Size:252K  inchange semiconductor
tk50a04k3.pdf pdf_icon

TK50A04K3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK50A04K3 ITK50A04K3 FEATURES Low drain-source on-resistance RDS(ON) = 3.5m (VGS = 10 V) Enhancement mode Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMU... See More ⇒

Detailed specifications: TK42E12N1, TK45S06K3L, TK46A08N1, TK46E08N1, TK49N65W, TK49N65W5, TK4P60D, TK4Q60DA, IRFB4115, TK50S04K3L, TK55S10N1, TK56A12N1, TK56E12N1, TK58A06N1, TK58E06N1, TK5A60W, TK5A60W5

Keywords - TK50A04K3 MOSFET specs

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