TK55S10N1 PDF and Equivalents Search

 

TK55S10N1 Specs and Replacement

Type Designator: TK55S10N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 157 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: DPAK

TK55S10N1 substitution

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TK55S10N1 datasheet

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TK55S10N1

TK55S10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK55S10N1 TK55S10N1 TK55S10N1 TK55S10N1 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance RDS(ON) = 5.5 m (typ.) (VGS = 10 V) (3) Low l... See More ⇒

Detailed specifications: TK46A08N1, TK46E08N1, TK49N65W, TK49N65W5, TK4P60D, TK4Q60DA, TK50A04K3, TK50S04K3L, P55NF06, TK56A12N1, TK56E12N1, TK58A06N1, TK58E06N1, TK5A60W, TK5A60W5, TK5A65W, TK5P60W

Keywords - TK55S10N1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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