All MOSFET. TK55S10N1 Datasheet

 

TK55S10N1 Datasheet and Replacement


   Type Designator: TK55S10N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 157 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DPAK
 

 TK55S10N1 substitution

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TK55S10N1 Datasheet (PDF)

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TK55S10N1

TK55S10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK55S10N1TK55S10N1TK55S10N1TK55S10N11. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 5.5 m (typ.) (VGS = 10 V)(3) Low l

Datasheet: TK46A08N1 , TK46E08N1 , TK49N65W , TK49N65W5 , TK4P60D , TK4Q60DA , TK50A04K3 , TK50S04K3L , IRFB4115 , TK56A12N1 , TK56E12N1 , TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W .

History: AM1561CE | APTC60DDAM70CT1G

Keywords - TK55S10N1 MOSFET datasheet

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