TK56A12N1 MOSFET Datasheet: N-Ch, 120V, 56A. Full specification with pinout and replacement list

TK56A12N1 Specs and Replacement

Type Designator: TK56A12N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-220SIS

TK56A12N1 substitution

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TK56A12N1 datasheet

..1. Size:237K toshiba
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TK56A12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK56A12N1 TK56A12N1 TK56A12N1 TK56A12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.2 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha... See More ⇒

..2. Size:252K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK56A12N1 ITK56A12N1 FEATURES Low drain-source on-resistance RDS(ON) = 7.5m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI... See More ⇒

Detailed specifications: TK46E08N1, TK49N65W, TK49N65W5, TK4P60D, TK4Q60DA, TK50A04K3, TK50S04K3L, TK55S10N1, 8205A, TK56E12N1, TK58A06N1, TK58E06N1, TK5A60W, TK5A60W5, TK5A65W, TK5P60W, TK5P60W5