TK58A06N1 Datasheet and Replacement
Type Designator: TK58A06N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO-220SIS
TK58A06N1 substitution
TK58A06N1 Datasheet (PDF)
tk58a06n1.pdf

TK58A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK58A06N1TK58A06N1TK58A06N1TK58A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan
tk58a06n1.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK58A06N1ITK58A06N1FEATURESLow drain-source on-resistance:RDS(ON) = 5.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI
Datasheet: TK49N65W5 , TK4P60D , TK4Q60DA , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 , TK56E12N1 , STP75NF75 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W .
History: NTHS4101PT1G | STL70N10F3 | FDZ375P | 2SK538 | 2SK3541MGP | SFS12R08PNF
Keywords - TK58A06N1 MOSFET datasheet
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History: NTHS4101PT1G | STL70N10F3 | FDZ375P | 2SK538 | 2SK3541MGP | SFS12R08PNF



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