All MOSFET. TK58E06N1 Datasheet

 

TK58E06N1 Datasheet and Replacement


   Type Designator: TK58E06N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO-220
 

 TK58E06N1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK58E06N1 Datasheet (PDF)

 ..1. Size:245K  toshiba
 tk58e06n1.pdf pdf_icon

TK58E06N1

TK58E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK58E06N1TK58E06N1TK58E06N1TK58E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan

 ..2. Size:246K  inchange semiconductor
 tk58e06n1.pdf pdf_icon

TK58E06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK58E06N1ITK58E06N1FEATURESLow drain-source on-resistance:RDS(on) 5.4m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

Datasheet: TK4P60D , TK4Q60DA , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 , TK56E12N1 , TK58A06N1 , 7N65 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W .

History: IXFB62N80Q3 | SSM60T03GH | SQJ262EP | BL13N25L-U | GSM4946BW | XP202A0003MR-G | MTP30P06V

Keywords - TK58E06N1 MOSFET datasheet

 TK58E06N1 cross reference
 TK58E06N1 equivalent finder
 TK58E06N1 lookup
 TK58E06N1 substitution
 TK58E06N1 replacement

 

 
Back to Top

 


 
.