TK58E06N1 MOSFET Datasheet: N-Ch, 60V, 58A. Full specification with pinout and replacement list

TK58E06N1 Specs and Replacement

Type Designator: TK58E06N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: TO-220

TK58E06N1 substitution

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TK58E06N1 datasheet

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TK58E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK58E06N1 TK58E06N1 TK58E06N1 TK58E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 4.4 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enhan... See More ⇒

..2. Size:246K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK58E06N1 ITK58E06N1 FEATURES Low drain-source on-resistance RDS(on) 5.4m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX... See More ⇒

Detailed specifications: TK4P60D, TK4Q60DA, TK50A04K3, TK50S04K3L, TK55S10N1, TK56A12N1, TK56E12N1, TK58A06N1, IRF630, TK5A60W, TK5A60W5, TK5A65W, TK5P60W, TK5P60W5, TK5P65W, TK5Q60W, TK5Q65W