All MOSFET. TK58E06N1 Datasheet

 

TK58E06N1 Datasheet and Replacement


   Type Designator: TK58E06N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO-220
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TK58E06N1 Datasheet (PDF)

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TK58E06N1

TK58E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK58E06N1TK58E06N1TK58E06N1TK58E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan

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TK58E06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK58E06N1ITK58E06N1FEATURESLow drain-source on-resistance:RDS(on) 5.4m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BL6N40-D | SM4186T9RL | WMM07N65C4 | NCE30P12BS | NP180N04TUJ | APT10021JFLL | SSW65R190S2

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