IRFU210 Datasheet. Specs and Replacement

Type Designator: IRFU210  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251

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IRFU210 substitution

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IRFU210 datasheet

 ..1. Size:1298K  international rectifier
 irfr210pbf irfu210pbf.pdf pdf_icon

IRFU210

PD - 95068A IRFR210PbF IRFU210PbF Lead-Free 12/9/04 Document Number 91268 www.vishay.com 1 IRFR/U210PbF Document Number 91268 www.vishay.com 2 IRFR/U210PbF Document Number 91268 www.vishay.com 3 IRFR/U210PbF Document Number 91268 www.vishay.com 4 IRFR/U210PbF Document Number 91268 www.vishay.com 5 IRFR/U210PbF Document Number 91268 www.vishay.com 6 IRFR/U21... See More ⇒

 ..2. Size:821K  vishay
 irfr210pbf irfu210pbf sihfr210 sihfu210.pdf pdf_icon

IRFU210

IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas... See More ⇒

 ..3. Size:2066K  vishay
 irfr210 irfu210 sihfr210 sihfu210.pdf pdf_icon

IRFU210

IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 Available in ... See More ⇒

 0.1. Size:655K  fairchild semi
 irfr210b irfu210b 2.pdf pdf_icon

IRFU210

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t... See More ⇒

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Detailed specifications: IRFU110A, IRFU111, IRFU120, IRFU1205, IRFU120A, IRFU120N, IRFU121, IRFU130A, IRF530, IRFU210A, IRFU212, IRFU214, IRFU214A, IRFU220, IRFU220A, IRFU222, IRFU224

Keywords - IRFU210 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs