IRFU210 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFU210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.2(max) nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 53 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO251
IRFU210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFU210 Datasheet (PDF)
irfr210pbf irfu210pbf.pdf
PD - 95068AIRFR210PbFIRFU210PbF Lead-Free12/9/04Document Number: 91268 www.vishay.com1IRFR/U210PbFDocument Number: 91268 www.vishay.com2IRFR/U210PbFDocument Number: 91268 www.vishay.com3IRFR/U210PbFDocument Number: 91268 www.vishay.com4IRFR/U210PbFDocument Number: 91268 www.vishay.com5IRFR/U210PbFDocument Number: 91268 www.vishay.com6IRFR/U21
irfr210pbf irfu210pbf sihfr210 sihfu210.pdf
IRFR210, IRFU210, SiHFR210, SiHFU210www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210)Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas
irfr210 irfu210 sihfr210 sihfu210.pdf
IRFR210, IRFU210, SiHFR210, SiHFU210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 1.5 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210)Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210)Qgd (nC) 4.5 Available in
irfr210b irfu210b 2.pdf
November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t
irfr210b irfu210b.pdf
November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t
irfr214pbf irfu214pbf.pdf
PD- 95384AIRFR214PbFIRFU214PbF Lead-Free12/3/04Document Number: 91269 www.vishay.com1IRFR/U214PbFDocument Number: 91269 www.vishay.com2IRFR/U214PbFDocument Number: 91269 www.vishay.com3IRFR/U214PbFDocument Number: 91269 www.vishay.com4IRFR/U214PbFDocument Number: 91269 www.vishay.com5IRFR/U214PbFDocument Number: 91269 www.vishay.com6IRFR/U214
irfr214b irfu214b.pdf
November 2001IRFR214B / IRFU214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored t
irfu214b.pdf
November 2001IRFR214B / IRFU214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored t
irfr214 irfu214 sihfr214 sihfu214.pdf
IRFR214, IRFU214, SiHFR214, SiHFU214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 2.0 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210)Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210)Qgd (nC) 4.5 Available
irfr214pbf irfu214pbf sihfr214 sihfu214.pdf
IRFR214, IRFU214, SiHFR214, SiHFU214www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214)Qg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas
irfu214.pdf
iscN-Channel MOSFET Transistor IRFU214FEATURESLow drain-source on-resistance:RDS(ON) 2.0 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Datasheet: IRFU110A , IRFU111 , IRFU120 , IRFU1205 , IRFU120A , IRFU120N , IRFU121 , IRFU130A , 10N65 , IRFU210A , IRFU212 , IRFU214 , IRFU214A , IRFU220 , IRFU220A , IRFU222 , IRFU224 .
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