All MOSFET. TK62J60W5 Datasheet

 

TK62J60W5 Datasheet and Replacement


   Type Designator: TK62J60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 61.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 205 nC
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-3P
 

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TK62J60W5 Datasheet (PDF)

 ..1. Size:240K  toshiba
 tk62j60w5.pdf pdf_icon

TK62J60W5

TK62J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK62J60W5TK62J60W5TK62J60W5TK62J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 170 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.036 (typ.) by used to Super Junction St

 6.1. Size:240K  toshiba
 tk62j60w.pdf pdf_icon

TK62J60W5

TK62J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK62J60WTK62J60WTK62J60WTK62J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

Datasheet: TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , 8205A , TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E .

History: NVBLS001N06C | 2P985B-2

Keywords - TK62J60W5 MOSFET datasheet

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