TK62J60W5 Spec and Replacement
Type Designator: TK62J60W5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 61.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO-3P
TK62J60W5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK62J60W5 Specs
tk62j60w5.pdf
TK62J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK62J60W5 TK62J60W5 TK62J60W5 TK62J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 170 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.036 (typ.) by used to Super Junction St... See More ⇒
tk62j60w.pdf
TK62J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK62J60W TK62J60W TK62J60W TK62J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.033 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
Detailed specifications: TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , IRFP260 , TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E .
History: IPP60R190P6 | AP02N90JB
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