All MOSFET. TK65G10N1 Datasheet

 

TK65G10N1 Datasheet and Replacement


   Type Designator: TK65G10N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: D2PAK
 

 TK65G10N1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK65G10N1 Datasheet (PDF)

 ..1. Size:241K  toshiba
 tk65g10n1.pdf pdf_icon

TK65G10N1

TK65G10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK65G10N1TK65G10N1TK65G10N1TK65G10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

 0.1. Size:257K  inchange semiconductor
 itk65g10n1.pdf pdf_icon

TK65G10N1

Isc N-Channel MOSFET Transistor ITK65G10N1FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , TK62N60X , IRFB3607 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W , TK6Q60W , TK6Q65W .

History: NTMS4176PR2G | 4N90G-TF1-T | SFS06R06DF | IRL1104 | STS11N3LLH5 | FDB9506L-F085 | FDPC8011S

Keywords - TK65G10N1 MOSFET datasheet

 TK65G10N1 cross reference
 TK65G10N1 equivalent finder
 TK65G10N1 lookup
 TK65G10N1 substitution
 TK65G10N1 replacement

 

 
Back to Top

 


 
.