TK65G10N1 MOSFET Datasheet: N-Ch, 100V, 65A. Full specification with pinout and replacement list

TK65G10N1 Specs and Replacement

Type Designator: TK65G10N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: D2PAK

TK65G10N1 substitution

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TK65G10N1 datasheet

..1. Size:241K toshiba
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TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK65G10N1 TK65G10N1 TK65G10N1 TK65G10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha... See More ⇒

0.1. Size:257K inchange semiconductor
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Isc N-Channel MOSFET Transistor ITK65G10N1 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

Detailed specifications: TK5Q60W, TK5Q65W, TK60F08K3, TK62J60W, TK62J60W5, TK62N60W, TK62N60W5, TK62N60X, K4145, TK65S04N1L, TK6A60W, TK6A65W, TK6A80E, TK6P60W, TK6P65W, TK6Q60W, TK6Q65W