All MOSFET. TK65S04N1L Datasheet

 

TK65S04N1L MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK65S04N1L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: DPAK

 TK65S04N1L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK65S04N1L Datasheet (PDF)

 ..1. Size:309K  toshiba
 tk65s04n1l.pdf

TK65S04N1L TK65S04N1L

TK65S04N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK65S04N1LTK65S04N1LTK65S04N1LTK65S04N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.3 m (typ.)(2) Low leakage current: IDSS = 10 A (m

 7.1. Size:245K  toshiba
 tk65s04k3l.pdf

TK65S04N1L TK65S04N1L

TK65S04K3LMOSFETs Silicon N-channel MOS (U-MOS )TK65S04K3LTK65S04K3LTK65S04K3LTK65S04K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.6 m (typ.) (VGS = 10 V)(2) Low leakage current

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: XP161A1355PR | HRF3205S | PSMN027-100BS | STM4470

 

 
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