TK65S04N1L PDF and Equivalents Search

 

TK65S04N1L Specs and Replacement

Type Designator: TK65S04N1L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: DPAK

TK65S04N1L substitution

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TK65S04N1L datasheet

 ..1. Size:309K  toshiba
 tk65s04n1l.pdf pdf_icon

TK65S04N1L

TK65S04N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK65S04N1L TK65S04N1L TK65S04N1L TK65S04N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.3 m (typ.) (2) Low leakage current IDSS = 10 A (m... See More ⇒

 7.1. Size:245K  toshiba
 tk65s04k3l.pdf pdf_icon

TK65S04N1L

TK65S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK65S04K3L TK65S04K3L TK65S04K3L TK65S04K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.6 m (typ.) (VGS = 10 V) (2) Low leakage current... See More ⇒

Detailed specifications: TK5Q65W, TK60F08K3, TK62J60W, TK62J60W5, TK62N60W, TK62N60W5, TK62N60X, TK65G10N1, 13N50, TK6A60W, TK6A65W, TK6A80E, TK6P60W, TK6P65W, TK6Q60W, TK6Q65W, TK70J04K3Z

Keywords - TK65S04N1L MOSFET specs

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