TK6A80E Specs and Replacement
Type Designator: TK6A80E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO-220SIS
TK6A80E substitution
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TK6A80E datasheet
tk6a80e.pdf
TK6A80E MOSFETs Silicon N-Channel MOS ( -MOS ) TK6A80E TK6A80E TK6A80E TK6A80E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.35 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 640 V) (3) Enhancement mode Vth = 2.5... See More ⇒
Detailed specifications: TK62J60W5, TK62N60W, TK62N60W5, TK62N60X, TK65G10N1, TK65S04N1L, TK6A60W, TK6A65W, 5N65, TK6P60W, TK6P65W, TK6Q60W, TK6Q65W, TK70J04K3Z, TK72A08N1, TK72A12N1, TK72E08N1
Keywords - TK6A80E MOSFET specs
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