TK7A90E Specs and Replacement
Type Designator: TK7A90E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-220SIS
TK7A90E substitution
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TK7A90E datasheet
tk7a90e.pdf
TK7A90E MOSFETs Silicon N-Channel MOS ( -MOS ) TK7A90E TK7A90E TK7A90E TK7A90E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.6 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 720 V) (3) Enhancement mode Vth = 2.5 ... See More ⇒
Detailed specifications: TK70J04K3Z, TK72A08N1, TK72A12N1, TK72E08N1, TK72E12N1, TK7A60W, TK7A60W5, TK7A65W, 4N60, TK7J90E, TK7P60W, TK7P60W5, TK7P65W, TK7Q60W, TK7Q65W, TK7S10N1Z, TK80A04K3L
Keywords - TK7A90E MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: TK7A60W5
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