All MOSFET. TK7A90E Datasheet

 

TK7A90E Datasheet and Replacement


   Type Designator: TK7A90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-220SIS
 

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TK7A90E Datasheet (PDF)

 ..1. Size:227K  toshiba
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TK7A90E

TK7A90EMOSFETs Silicon N-Channel MOS (-MOS)TK7A90ETK7A90ETK7A90ETK7A90E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.6 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 720 V)(3) Enhancement mode: Vth = 2.5

 ..2. Size:240K  inchange semiconductor
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TK7A90E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK7A90EITK7A90EFEATURESLow drain-source on-resistance:RDS(on) 2.0.Enhancement mode:Vth = 2.5 to 4.0V (VDS = 10 V, ID=0.7mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: TK70J04K3Z , TK72A08N1 , TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W , 10N65 , TK7J90E , TK7P60W , TK7P60W5 , TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z , TK80A04K3L .

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