TK7Q65W MOSFET Datasheet: N-Ch, 650V, 6.8A. Full specification with pinout and replacement list

TK7Q65W Specs and Replacement

Type Designator: TK7Q65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: IPAK

TK7Q65W substitution

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TK7Q65W datasheet

..1. Size:380K toshiba
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TK7Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7Q65W TK7Q65W TK7Q65W TK7Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.66 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

..2. Size:234K inchange semiconductor
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9.1. Size:244K toshiba
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TK7Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7Q60W TK7Q60W TK7Q60W TK7Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancem... See More ⇒

Detailed specifications: TK7A60W5, TK7A65W, TK7A90E, TK7J90E, TK7P60W, TK7P60W5, TK7P65W, TK7Q60W, RFP50N06, TK7S10N1Z, TK80A04K3L, TK8A60W, TK8A60W5, TK8A65W, TK8P60W, TK8P60W5, TK8P65W