All MOSFET. TK7Q65W Datasheet

 

TK7Q65W MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK7Q65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: IPAK

 TK7Q65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK7Q65W Datasheet (PDF)

 ..1. Size:380K  toshiba
 tk7q65w.pdf

TK7Q65W TK7Q65W

TK7Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK7Q65WTK7Q65WTK7Q65WTK7Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.66 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 ..2. Size:234K  inchange semiconductor
 tk7q65w.pdf

TK7Q65W TK7Q65W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK7Q65WITK7Q65WFEATURESLow drain-source on-resistance:RDS(on) 0.8.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:244K  toshiba
 tk7q60w.pdf

TK7Q65W TK7Q65W

TK7Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK7Q60WTK7Q60WTK7Q60WTK7Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancem

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History: IXFP14N60P

 

 
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