TK7S10N1Z Specs and Replacement
Type Designator: TK7S10N1Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.6 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: DPAK
TK7S10N1Z substitution
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TK7S10N1Z datasheet
tk7s10n1z.pdf
TK7S10N1Z MOSFETs Silicon N-channel MOS (U-MOS -H) TK7S10N1Z TK7S10N1Z TK7S10N1Z TK7S10N1Z 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance RDS(ON) = 40 m (typ.) (VGS = 10 V) (3) Low le... See More ⇒
Detailed specifications: TK7A65W, TK7A90E, TK7J90E, TK7P60W, TK7P60W5, TK7P65W, TK7Q60W, TK7Q65W, SI2302, TK80A04K3L, TK8A60W, TK8A60W5, TK8A65W, TK8P60W, TK8P60W5, TK8P65W, TK8Q60W
Keywords - TK7S10N1Z MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: KHB7D0N65F1 | KHB019N20F2 | KHB1D0N60I | KHB019N20F1 | WMK53N65F2 | KHB1D2N80I
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