All MOSFET. TK7S10N1Z Datasheet

 

TK7S10N1Z Datasheet and Replacement


   Type Designator: TK7S10N1Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: DPAK
 

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TK7S10N1Z Datasheet (PDF)

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TK7S10N1Z

TK7S10N1ZMOSFETs Silicon N-channel MOS (U-MOS-H)TK7S10N1ZTK7S10N1ZTK7S10N1ZTK7S10N1Z1. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 40 m (typ.) (VGS = 10 V)(3) Low le

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History: IRFB3207ZG

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