All MOSFET. TK80A04K3L Datasheet

 

TK80A04K3L Datasheet and Replacement


   Type Designator: TK80A04K3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO-220SIS
 

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TK80A04K3L Datasheet (PDF)

 ..1. Size:231K  toshiba
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TK80A04K3L

TK80A04K3LMOSFETs Silicon N-channel MOS (U-MOS)TK80A04K3LTK80A04K3LTK80A04K3LTK80A04K3L1. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS

 ..2. Size:253K  inchange semiconductor
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TK80A04K3L

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK80A04K3LITK80A04K3LFEATURESLow drain-source on-resistance:RDS(ON) = 2.4m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE

 8.1. Size:207K  toshiba
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TK80A04K3L

TK80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK80A08K3 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.6 m (typ.) High forward transfer admittance: |Yfs| = 200 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 75 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

Datasheet: TK7A90E , TK7J90E , TK7P60W , TK7P60W5 , TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z , 7N60 , TK8A60W , TK8A60W5 , TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W .

History: SFP055N100C3 | IPP039N10N5

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