TK80A04K3L - аналоги, параметры транзистора - Справочник транзисторов

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TK80A04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK80A04K3L TK80A04K3L TK80A04K3L TK80A04K3L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK80A04K3L ITK80A04K3L FEATURES Low drain-source on-resistance RDS(ON) = 2.4m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE

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TK80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK80A08K3 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 3.6 m (typ.) High forward transfer admittance Yfs = 200 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 75 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

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