TK90S06N1L Specs and Replacement
Type Designator: TK90S06N1L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 157 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 2630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: DPAK
TK90S06N1L substitution
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TK90S06N1L datasheet
tk90s06n1l.pdf
TK90S06N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK90S06N1L TK90S06N1L TK90S06N1L TK90S06N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDS... See More ⇒
Detailed specifications: TK8A60W, TK8A60W5, TK8A65W, TK8P60W, TK8P60W5, TK8P65W, TK8Q60W, TK8Q65W, P60NF06, TK9A65W, TK9A90E, TK9J90E, TK9P65W, TK9Q65W, TMA7N90, TMAN10N80, TMAN11N90AZ
Keywords - TK90S06N1L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STP60N05 | STP60N05FI | TK7Q65W | WMN53N65C4 | WMN53N60F2
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