All MOSFET. TK90S06N1L Datasheet

 

TK90S06N1L Datasheet and Replacement


   Type Designator: TK90S06N1L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 157 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 2630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: DPAK
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TK90S06N1L Datasheet (PDF)

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TK90S06N1L

TK90S06N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK90S06N1LTK90S06N1LTK90S06N1LTK90S06N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDS

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History: FQB11P06 | APT10021JFLL | SSW65R190S2 | NP180N04TUJ | SM4186T9RL | SRT10N160LD | NCE30P12BS

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