TK9A90E Specs and Replacement
Type Designator: TK9A90E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-220SIS
TK9A90E substitution
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TK9A90E datasheet
tk9a90e.pdf
TK9A90E MOSFETs Silicon N-Channel MOS ( -MOS ) TK9A90E TK9A90E TK9A90E TK9A90E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.0 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 720 V) (3) Enhancement mode Vth = 2.5 ... See More ⇒
Detailed specifications: TK8A65W, TK8P60W, TK8P60W5, TK8P65W, TK8Q60W, TK8Q65W, TK90S06N1L, TK9A65W, AO3400A, TK9J90E, TK9P65W, TK9Q65W, TMA7N90, TMAN10N80, TMAN11N90AZ, TMAN11N90Z, TMAN12N80AZ
Keywords - TK9A90E MOSFET specs
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History: 2SK3236
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