All MOSFET. TK9A90E Datasheet

 

TK9A90E Datasheet and Replacement


   Type Designator: TK9A90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220SIS
 

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TK9A90E Datasheet (PDF)

 ..1. Size:225K  toshiba
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TK9A90E

TK9A90EMOSFETs Silicon N-Channel MOS (-MOS)TK9A90ETK9A90ETK9A90ETK9A90E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.0 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 720 V)(3) Enhancement mode: Vth = 2.5

 ..2. Size:239K  inchange semiconductor
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TK9A90E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK9A90EITK9A90EFEATURESLow drain-source on-resistance:RDS(on) 1.3.Enhancement mode:Vth = 2.5 to 4.0V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , TK9A65W , RU6888R , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ .

History: IPP037N08N3 | NCEP045N10F

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