TK9J90E PDF and Equivalents Search

 

TK9J90E Specs and Replacement

Type Designator: TK9J90E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-3P

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TK9J90E datasheet

 ..1. Size:231K  toshiba
 tk9j90e.pdf pdf_icon

TK9J90E

TK9J90E MOSFETs Silicon N-Channel MOS ( -MOS ) TK9J90E TK9J90E TK9J90E TK9J90E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.0 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 720 V) (3) Enhancement mode Vth = 2.5 ... See More ⇒

 ..2. Size:220K  inchange semiconductor
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TK9J90E

isc N-Channel MOSFET Transistor TK9J90E DESCRIPTION Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching voltage regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V... See More ⇒

Detailed specifications: TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , TK9A65W , TK9A90E , IRFB31N20D , TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z .

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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